View DG444DJ_1033149.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DG444/445
Vishay Siliconix
Quad SPST CMOS Analog Switches
FEATURES
D D D D D D D Low On-Resistance: 50 W Low Leakage: 80 pA Low Power Consumption: 22 nW Fast Switching Action--tON: 120 ns Low Charge Injection DG211/DG212 Upgrades TTL/CMOS Logic Compatible
BENEFITS
D Low Signal Errors and Distortion D Reduced Power Supply Requirements D Faster Throughput D Improved Reliability D Reduced Pedestal Errors D Simple Interfacing
APPLICATIONS
D D D D D D D D Audio Switching Battery Powered Systems Data Acquisition Sample-and-Hold Circuits Telecommunication Systems Automatic Test Equipment Single Supply Circuits Hard Disk Drives
DESCRIPTION
The DG444/DG445 monolithic quad analog switches are designed to provide high speed, low error switching of analog signals. The DG444 has a normally closed function. The DG445 has a normally open function. Combining low power (22 nW, typ) with high speed (tON: 120 ns, typ), the DG444/DG445 are ideally suited for upgrading DG211/212 sockets. Charge injection has been minimized on the drain for use in sample-and-hold circuits. To achieve high-voltage ratings and superior switching performance, the DG444/DG445 are built on Vishay Siliconix's high-voltage silicon-gate process. An epitaxial layer prevents latchup.
Each switch conducts equally well in both directions when on, and blocks input voltages to the supply levels when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Dual-In-Line and SOIC
IN1 D1 S1 V- GND S4 D4 IN4
1 2 3 4
16 15 14 13
IN2
TRUTH TABLE
Logic DG444
ON OFF Logic "0" v 0.8 V Logic "1" w 2.4 V
DG445
OFF ON
D2 S2 V+ VL
0 1
DG444
5 6 7 8 12 11 10 9
ORDERING INFORMATION
S3 D3 -40_C to 85_C 40_C IN3 DG444DY 16-Pin Narrow SOIC DG445DY Top View
Temp Range
Package
16-Pin Plastic DIP
Part Number
DG444DJ DG445DJ
Document Number: 70054 S-52433--Rev. F, 06-Sep-99
www.vishay.com S FaxBack 408-970-5600
4-1
DG444/445
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND -0.3 V) to (V+) + 0.3 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . (V-) -2 V to (V+) +2 V or 30 mA, whichever occurs first Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Current, S or D (Pulsed 1 ms, 10% duty cycle) . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 125_C Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW 16-Pin Narrow Body SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/_C above 75_C d. Derate 8 mW/_C above 75_C
SPECIFICATIONS FOR DUAL SUPPLIES
Test Conditions Unless Otherwise Specified Parameter Analog Switch
Analog Signal Ranged Drain-Source On-Resistance VANALOG rDS(on) IS(off) Switch Off Leakage Current ID(off) Channel On Leakage Current ID(on) IS = -10 mA, VD = "8.5 V V+ = 13.5 V, V- = -13.5 V V+ = 16.5, V- = -16.5 V , VD = "15.5 V VS = #15.5 V 15 5 V, 15 5 V+ = 16.5 V, V- = -16.5 V VS = VD = "15.5 V Full Room Full Room Full Room Full Room Full -0.5 -5 -0.5 -5 -0.5 -10 -15 50 "0.01 "0.01 "0.08 15 85 100 0.5 5 0.5 5 0.5 10 nA A V W
D Suffix
-40 to 85_C
Symbol
V+ = 15 V, V- = -15 V VL = 5 V, VIN = 2.4 V, 0.8 Ve
Tempa
Minb
Typc
Maxb
Unit
Digital Control
Input Current VIN Low Input Current VIN High IIL IIH VIN under test = 0.8 V All Other = 2.4 V VIN under test = 2.4 V All Other = 0.8 V Full Full -500 -500 -0.01 0.01 500 nA 500
Dynamic Characteristics
Turn-On Time Turn-Off Time Charge Injectione Off Isolatione Crosstalk (Channel-to-Channel)d Source Off Capacitance Drain Off Capacitance Channel On Capacitance tON tOFF Q OIRR XTALK CS(off) CD(off) CD(on) RL = 1 kW , CL = 35 pF VS = "10 V, See Figure 2 CL = 1 nF, VS = 0 V Vgen = 0 V, Rgen = 0 W RL = 50 W, CL = 5 pF, f = 1 MHz W, f = 1 MHz VANALOG = 0 V DG444 DG445 Room Room Room Room Room Room Room Room Room 120 110 160 -1 60 100 4 4 16 pF F 250 140 210 pC dB ns
Power Supplies
Positive Supply Current Negative Supply Current Logic Supply Current Ground Current I+ I- IL IGND Room Full V+ 16 5 V, V V = 16.5 V, V- = -16.5 V 16 5 VIN = 0 or 5 V Room Full Room Full Room Full -1 -5 -1 -5 0.001 -0.0001 1 5 mA A 1 5
0.001 -0.001
www.vishay.com S FaxBack 408-970-5600
4-2
Document Number: 70054 S-52433--Rev. F, 06-Sep-99
DG444/445
Vishay Siliconix
SPECIFICATIONS FOR UNIPOLAR SUPPLIES
Test Conditions Unless Otherwise Specified Parameter Analog Switch
Analog Signal Ranged Drain-Source On-Resistanced VANALOG rDS(on) IS = -10 mA, VD = 3 V, 8 V V+ = 10.8 V, VL = 5.25 V Full Room Full 0 100 12 160 200 V W
D Suffix
-40 to 85_C
Symbol
V+ = 12 V, V- = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Ve
Tempa
Minb
Typc
Maxb
Unit
Dynamic Characteristics
Turn-On Time Turn-Off Time Charge Injection tON tOFF Q RL = 1 kW , CL = 35 p , VS = 8 V pF, See Figure 2 S Fi CL = 1 nF, Vgen = 6 V, Rgen = 0 W Room Room Room 300 60 2 450 ns 200 pC
Power Supplies
Positive Supply Current Negative Supply Current Logic Supply Current Ground Current I+ I- IL IGND V+ = 13.2 V, VIN = 0 or 5 V VIN = 0 or 5 V VL = 5.25 V, VIN = 0 or 5 V VIN = 0 or 5 V Room Full Room Full Room Full Room Full -1 -5 -1 -5 0.001 -0.0001 0.001 -0.001 1 5 mA A 1 5
Notes: a. Room = 25_C, Full = as determined by the operating temperature suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. Guaranteed by design, not subject to production test. e. VIN = input voltage to perform proper function.
Document Number: 70054 S-52433--Rev. F, 06-Sep-99
www.vishay.com S FaxBack 408-970-5600
4-3
DG444/445
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
80 r DS(on) Drain-Source On-Resistance ( W ) - 70 60 -100 50 40 30 20 10 0 -15 -10 -5 0 5 10 15 VD - Drain Voltage (V) 0_C -40_C -40 -20 0 100 1k 10 k 100 k 1M 10 M V+ = 15 V V- = -15 V Ref. 10 dBm 85_C 25_C (dB) -80 -60 Off Isolation
rDS(on) vs. VD and Temnperature
V+ = 15 V V- = -15 V
Crosstak and Off Isolation vs. Frequency
-140 -120
Crosstalk
f - Frequency (Hz)
Charge Injection vs. Source Voltage
50 40 30 20 Q (pC) 10 0 -10 -20 -30 -10 -5 0 VS - Source Voltage (V) 5 10 0 0 V+ = 12 V V- = 0 V 3 V TH (V) V+ = 15 V V- = -15 V CL = 1 nF 4
Switching Threshold vs. Supply Voltage
2
VL = 7 V
1 VL = 5 V
4
8
12
16
20
VSUPPLY (V)
Source/Drain Leakage Currents
20 IS(off) , ID(off) 0 0 10
Source/Drain Leakage Currents (Single 12-V Supply)
IS(off), ID(off)
-20 I S, I D (pA) ID(on) -40 I S, I D (pA) -10 IS(on) + ID(on) -20 V+ = 12 V V- = 0 V For ID, VS = 0 V For IS, VD = 0 V
-60 V+ = 15 V V- = -15 V For I(off), VD = -VS -30
-80
-100 -15 -10 -5 0 5 10 15
-40 0 2 4 6 8 10 12
VD or VS - Drain or Source Voltage (V)
VD or VS - Drain or Source Voltage (V)
www.vishay.com S FaxBack 408-970-5600
4-4
Document Number: 70054 S-52433--Rev. F, 06-Sep-99
DG444/445
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Time vs. Power Supply Voltage
160 140 400 120 tON DG444 tOFF 300 t (ns) tON 200 tON DG445 500 V- = 0 V VL = 5 V
Switching Times vs. Power Supply Voltage
t (ns)
100 80 60 40 20 "10 "12 "14 "16 "18 "20 "22 "VSUPPLY (V) DG444 DG445 tON tOFF
100
tOFF
tOFF
0 8 10 12 14 16 18 20 22
V+ - Positive Supply (V)
100 mA 10 mA 1 mA I L , I-, I+, I GND 100 nA 10 nA
Supply Current vs. Temperature
25
Source/Drain Capacitance vs. Analog Voltage
V+ = 15 V V- = -15 V CS(on) + CD(on) C S, D (pF) 15
20 I+, IGND
-(I-) 1 nA 100 pA
10
5 10 pA 1 pA -55 -25 0 25 50 75 100 125 IL 0 -15 -10 -5 0 5 10 15 Temperature (_C) VANALOG - Analog Voltage (V) CS(off), CD(off)
Switching Time vs. Input Voltage
160 140 120 100 tON 80 60 40 20 2 3 Input Voltage (V) 4 5 DG444 DG445 tOFF V+ = 15 V V- = -15 V tON
t (ns)
Document Number: 70054 S-52433--Rev. F, 06-Sep-99
www.vishay.com S FaxBack 408-970-5600
4-5
DG444/445
Vishay Siliconix
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
S VL V- VIN Level Shift/ Drive V+ GND D
V-
FIGURE 1.
TEST CIRCUITS
+5 V +15 V Logic Input VL "10 V S IN 3V GND V- Switch Output 0V tON Logic input waveform is inverted for DG445. V+ D RL 1 kW CL 35 pF 0V VO Switch Input VS VO 80% 80% tOFF 3V 50% 50% tr <20 ns tf <20 ns
-15 V
CL (includes fixture and stray capacitance)
Note:
FIGURE 2. Switching Time
+5 V +15 V
DVO VO
Rg
VL S IN
V+ D CL 1 nF V- VO
INX OFF (DG444) ON OFF
Vg 3V
GND
-15 V
INX (DG445)
OFF
ON Q = DVO x CL
OFF
FIGURE 3. Charge Injection
www.vishay.com S FaxBack 408-970-5600
4-6
Document Number: 70054 S-52433--Rev. F, 06-Sep-99
DG444/445
Vishay Siliconix
TEST CIRCUITS
C = 1 mF tantalum in parallel with 0.01 mF ceramic +5 V +15 V C +5 V VL VS Rg = 50 W IN1 0V, 2.4 V S2 NC IN2 GND V- C -15 V -15 V Off Isolation = 20 log XTALK Isolation = 20 log C = RF bypass VS VO VS VO RL D2 VO 0V, 2.4 V S1 V+ D1 VL 50 W VS Rg = 50 W IN GND V- RL S V+ D VO +15 V C
0V, 2.4 V
C
FIGURE 4. Crosstalk
+5 V +15 V C
FIGURE 5. Off Isolation
VL
V+
S Meter
IN 0 V, 2.4 V D GND V- C
HP4192A Impedance Analyzer or Equivalent f = 1 MHz
-15 V
FIGURE 6. Source/Drain Capacitances
APPLICATIONS
+5 V +15 V
+15 V
VL
1/ 4
V+
DG444
+15 V VOUT 10 kW
+5 V VIN GND V-
0V
0V
FIGURE 7. Level Shifter
Document Number: 70054 S-52433--Rev. F, 06-Sep-99 www.vishay.com S FaxBack 408-970-5600
4-7
DG444/445
Vishay Siliconix
APPLICATIONS
VIN +5V VL
+ - +15 V V+
VOUT Gain error is determined only by the resistor tolerance. Op amp offset and CMRR will limit accuracy of circuit.
GAIN1 AV = 1
R1 90 kW With SW4 Closed: VOUT VIN = R1 + R2 + R3 + R4 R4 = 100
GAIN2 AV = 10
R2 5 kW
GAIN3 AV = 20 GAIN4 AV = 100
R3 4 kW
R4 1 kW
DG444 or DG445
V- GND
-15 V
FIGURE 8. Precision-Weighted Resistor Programmable-Gain Amplifier
+5 V V1
+15 V
Logic Input Low = Sample High = Hold
DG444
+15 V -15 V - VIN + 5 MW 5.1 MW 30 pF -15 V C1 50 pF V2 J202 R1 200 kW J500
+15 V
2N4400 VOUT J507
GND
C2 1000 pF
FIGURE 9. Precision Sample-and-Hold
www.vishay.com S FaxBack 408-970-5600
4-8
Document Number: 70054 S-52433--Rev. F, 06-Sep-99
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 Revision: 08-Apr-05
www.vishay.com 1

▲Up To Search▲

Price & Availability of DG444DJ

	To Download DG444DJ Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .